Scaps-1D Simulation, Effect of Device Architecture and Performance Analysis of CsPbI3 Inorganic Perovskite Solar Cell Material

PSC device is one of the evolving solar renewable energy resources that is globally best accepted for the replacement of conventional CIGS energy resources because it is efficient and profound for energy generation. Ensuring the effectiveness of this device is crucial, which will ensure its efficiency during conversion. In this research CsPbI₃ inorganic material was numerically simulated using the SCAPS-1D software with initial result of PCE, FF, J_sc and V_oc obtained as 31.61 %, 86.88 %, 42.0857 mA/cm²,  and 0.865 V respectively. The effect of values on HTL, absorber layer and ETL simulated the results shows that the thickness of each layer plays a vital role on the optimization of PSC devices except for HTL where only a little parameter changes are observed. Nevertheless, the acceptor density variation on HTL shows a unique increased effect on the PSC structure performance with a very good desirable optimized values of PCE, Jsc and Voc which was observed as 31.7 %, 86.9 %, 42.1 mA/cm², and 0.993 V at 10²⁰ cm^-3. This shows that the choice of parameters for the fabrication of a PSC device is important, because it will determine the effectiveness of the device.